PART |
Description |
Maker |
DR65-0001 DR65-0001TR |
Quad driver for GaAs switches and attenuator Quad Driver for GaAs FET Switches and Attenuators 四驱动砷化镓场效应管开关和衰减
|
MA-Com Tyco Electronics 飞思卡尔半导体(中国)有限公司
|
MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
DR65-0109 DR65-0109TR |
Single Driver for GaAs FET Switches and Attenuators
|
Tyco Electronics
|
NES2527B-30 |
30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
|
MGF0904A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体 CAP 15UF 16V 10% TANT SMD-6032-28 TR-7 CAP TANTALUM 1.5UF 35V 10% SMD 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp. NEC Corp. NEC[NEC] http://
|
MGF0905A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L /S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
HIP4081 HIP4081IP |
2.6 A FULL BRDG BASED MOSFET DRIVER, PDIP20 Driver, Full Bridge FET, High Frequency, 80V/2.5A Peak, Independent 4 N-Channel FET Driver
|
INTERSIL CORP
|
NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500 |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC Corp. NEC[NEC]
|
CFB0303 |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET High Dynamic Range Low Noise GaAs FET
|
MIMIX BROADBAND INC MIMIX[Mimix Broadband]
|
MADR-009269-000100 |
Single Driver for GaAs FET or PIN Diode Switches and Attenuators
|
M/A-COM Technology Solu...
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